Electronic atomization device, atomization assembly, atomization element and manufacturing method therefor

ABSTRACT

A vaporization element of an electronic vaporization device includes: a porous substrate; and a heating layer. The porous substrate includes a vaporization surface and the heating layer covers the vaporization surface. The heating layer includes a conductive layer and a stabilizing layer, the conductive layer covers the vaporization surface, and the stabilizing layer covers a surface of the conductive layer far from the porous substrate. A resistivity of the stabilizing layer is higher than a resistivity of the conductive layer. An oxidation resistance of the stabilizing layer is lower than an oxidation resistance of the conductive layer.

CROSS-REFERENCE TO PRIOR APPLICATION

This application is a continuation of International Patent ApplicationNo. PCT/CN2021/075810, filed on Feb. 7, 2021, which claims priority toChinese Patent Application No. 202010123152.6, filed on Feb. 27, 2020.The entire disclosure of both applications is hereby incorporated byreference herein.

FIELD

The present invention relates to the field of electronic vaporizationtechnologies, and specifically, to an electronic vaporization device, avaporization assembly, a vaporization element, and a manufacturingmethod for the vaporization element.

BACKGROUND

As more attention is paid to the health of human bodies, people areaware of harm of tobacco to the bodies. Therefore, an electronicvaporization device is produced. The electronic vaporization device hasan appearance and taste similar to the cigarette, but generally does notinclude tar, suspended particles, and other harmful ingredients in thecigarette, which greatly reduces harm to a user's body. Therefore, theelectronic vaporization device is generally used as a substitute for thecigarette and used for smoking cessation.

The electronic vaporization device generally includes a vaporizationassembly and a power supply assembly. A heating body of the vaporizationassembly of the electronic vaporization device currently on the marketincludes a spring-shaped heating wire. In a manufacturing process of theheating body, the linear heating wire is wound around a fixed shaft; andwhen the heating wire is powered on, an e-liquid stored on the storagemedium are adsorbed onto the fixed shaft and then are vaporized underthe heating effect of the heating wire. Another heating body includes anested combination of a ceramic and a heating wire, but the vaporizationefficiency is low and e-liquid frying is prone to occur. The technologyrelated to the heating body further includes manufacturing a thin-filmheating body on a porous ceramic substrate. However, the thin-filmheating body has a poor stability of the resistance value and a shortservice life.

SUMMARY

In an embodiment, the present invention provides a vaporization elementof an electronic vaporization device, the vaporization elementcomprising: a porous substrate; and a heating layer, wherein the poroussubstrate comprises a vaporization surface and the heating layer coversthe vaporization surface, wherein the heating layer comprises aconductive layer and a stabilizing layer, the conductive layer coversthe vaporization surface, and the stabilizing layer covers a surface ofthe conductive layer far from the porous substrate, wherein aresistivity of the stabilizing layer is higher than a resistivity of theconductive layer, and wherein an oxidation resistance of the stabilizinglayer is lower than an oxidation resistance of the conductive layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Subject matter of the present disclosure will be described in evengreater detail below based on the exemplary figures. All featuresdescribed and/or illustrated herein can be used alone or combined indifferent combinations. The features and advantages of variousembodiments will become apparent by reading the following detaileddescription with reference to the attached drawings, which illustratethe following:

FIG. 1 is a three-dimensional schematic structural diagram of anelectronic vaporization device according to an embodiment of the presentinvention.

FIG. 2 is a schematic structural exploded view of a vaporizationassembly of the electronic vaporization device shown in FIG. 1 .

FIG. 3 is a schematic cross-sectional view of a partial enlargementstructure of the vaporization assembly shown in FIG. 2 .

FIG. 4 is a schematic planar structural diagram of a vaporizationelement according to an embodiment of the present invention.

FIG. 5 is a schematic flowchart of a first embodiment of a manufacturingmethod for a vaporization element according to the present invention.

FIG. 6 is a schematic flowchart of a second embodiment of amanufacturing method for a vaporization element according to the presentinvention.

DETAILED DESCRIPTION

In an embodiment, the present invention provides an electronicvaporization device, a vaporization assembly, a vaporization element,and a manufacturing method for the vaporization element, to resolve theproblem that a resistance value of a conductive layer increasesexcessively fast.

In an embodiment, the present invention provides a vaporization elementof an electronic vaporization device, the vaporization elementincluding: a porous substrate and a heating layer, where the poroussubstrate includes a vaporization surface, and the heating layer coversthe vaporization surface. The heating layer includes a conductive layerand a stabilizing layer, the conductive layer covers the vaporizationsurface, and the stabilizing layer covers a surface of the conductivelayer far away from the porous substrate; and a resistivity of thestabilizing layer is higher than a resistivity of the conductive layer,and oxidation resistance of the stabilizing layer is lower thanoxidation resistance of the conductive layer.

A material of the stabilizing layer is one or any combination ofaluminum, zinc, tin, magnesium, or titanium; and a material of theconductive layer is one or any combination of titanium, zirconium,niobium, tantalum, or 316 stainless steel.

The material of the stabilizing layer is aluminum; and the material ofthe conductive layer is a titanium-zirconium alloy.

A thickness of the heating layer ranges from 1.5 μm to 5 μm, where athickness of the stabilizing layer ranges from 0.5 μm to 2 μm, and athickness of the conductive layer ranges from 2 μm to 3 μm.

The vaporization element further includes: a first electrode and asecond electrode located on the stabilizing layer far away from theporous substrate and covering a part of the stabilizing layer.

Materials of the first electrode and the second electrode are silver.

To resolve the foregoing technical problem, a second technical solutionprovided in the present invention is to provide a vaporization assemblyof an electronic vaporization device, the vaporization assemblyincluding: a liquid storage cavity configured to store an e-liquid andthe vaporization element according to any one of the foregoing items,where the e-liquid in the liquid storage cavity is deliverable to thevaporization surface.

To resolve the foregoing technical problem, a third technical solutionprovided in the present invention is to provide an electronicvaporization device, including: a power supply assembly and theforegoing vaporization assembly, where the power supply assembly iselectrically connected to the vaporization assembly to supply power tothe vaporization element of the vaporization assembly.

To resolve the foregoing technical problem, a fourth technical solutionprovided in the present invention is to provide a manufacturing methodfor a vaporization element of an electronic vaporization device, themethod including: providing a porous substrate, where the poroussubstrate includes a vaporization surface; arranging a conductive layeron the vaporization surface of the porous substrate; and arranging astabilizing layer on a surface of the conductive layer far away from theporous substrate. A resistivity of the stabilizing layer is higher thana resistivity of the conductive layer, and oxidation resistance of thestabilizing layer is lower than oxidation resistance of the conductivelayer.

The arranging a conductive layer on the vaporization surface of theporous substrate includes: arranging the conductive layer on thevaporization surface of the porous substrate by using a direct-currentsputtering deposition process or a magnetron sputtering depositionprocess; and/or the step of arranging a stabilizing layer on a surfaceof the conductive layer far away from the porous substrate includes:forming the stabilizing layer on one side of the conductive layer faraway from the porous substrate by using the direct-current sputteringdeposition process or the magnetron sputtering deposition process.

The method further includes: arranging a first electrode and a secondelectrode covering a part of the stabilizing layer on one side of thestabilizing layer far away from the porous substrate in ascreen-printing manner, and performing low-temperature sintering on thefirst electrode and the second electrode.

A total thickness of the stabilizing layer and the conductive layerranges from 1.5 μm to 5 μm, where a thickness of the stabilizing layerranges from 0.5 μm to 2 μm, and a thickness of the conductive layerranges from 2 μm to 3 μm; and/or a material of the stabilizing layer isone or any combination of aluminum, zinc, tin, magnesium, or titanium;and a material of the conductive layer is one or any combination oftitanium, zirconium, niobium, tantalum, or 316 stainless steel.

The material of the stabilizing layer is aluminum; and the material ofthe conductive layer is a titanium-zirconium alloy.

Beneficial effects of the present invention are as follows: Differentfrom the related art, in the present invention, a conductive layer and astabilizing layer are formed on a vaporization surface of a poroussubstrate, a resistivity of the stabilizing layer is higher than aresistivity of the conductive layer, and oxidation resistance of thestabilizing layer is lower than oxidation resistance of the conductivelayer. The stabilizing layer is made of such a material, so that aresistance value of the conductive layer is relatively stable duringheating, and does not dramatically increase, thereby resolving theproblem that the resistance value of the conductive layer increasesexcessively fast, and bringing an excellent and stable taste to theuser.

The following clearly and completely describes the technical solutionsin the embodiments of the present invention with reference to theaccompanying drawings in the embodiments of the present invention.Apparently, the described embodiments are merely some rather than all ofthe embodiments of the present invention. All other embodiments obtainedby a person of ordinary skill in the art based on the embodiments of thepresent invention without creative efforts shall fall within theprotection scope of the present invention.

Existing common ceramic heating wires cannot heat evenly, and e-liquidfrying is prone to occur during vaporization. A heating film of anitride type has a poor stability and a short heating service life. Aheating wire of a precious metal type has high costs, and particleagglomeration is prone to occur. To reduce an increase in the resistancevalue, the present invention provides a novel electronic vaporizationdevice, vaporization assembly, vaporization element, and a manufacturingmethod for the vaporization element, which are described below withreference to the accompanying drawings and specific embodiments.

Referring to FIG. 1 , the electronic vaporization device of the presentinvention may include a vaporization assembly 100 and a power supplyassembly 200. The power supply assembly 200 is electrically connected tothe vaporization assembly 100, to supply power to the vaporizationassembly 100.

In this embodiment, the power supply assembly 200 is detachablyconnected to the vaporization assembly 100, so that any one of theassemblies can be replaced if the assembly is damaged. In otherembodiments, the power supply assembly 200 and the vaporization assembly100 may alternatively share a same housing, so that the electronicvaporization device is of an integral structure and then is moreconvenient to carry. A connection manner of the power supply assembly200 and the vaporization assembly 100 is not specifically limited in theembodiments of the present invention.

As shown in FIG. 2 and FIG. 3 , the vaporization assembly 100 includes aliquid storage cavity 10, an upper cover 20, an airflow channel 30, anda vaporization element 40. The vaporization element 40 is arrangedinside the upper cover 20, the upper cover 20 is configured to guide ane-liquid in the liquid storage cavity 10 into the vaporization element40, and the airflow channel 30 is in communication with a vaporizationsurface of the vaporization element 40, to discharge vaporized vapor.

Specifically, in this embodiment, the upper cover 20 may include a guideportion 22, an engagement portion 24, and an accommodation portion 26that are connected in sequence. The guide portion 22 is provided with aliquid inlet hole 222 and an air outlet hole 224, where the liquid inlethole 222 is in communication with the liquid storage cavity 10, and theair outlet hole 224 is in communication with the airflow channel 30. Anaccommodation cavity 262 for accommodating the vaporization element 40is formed on the accommodation portion 26, and the vaporization element40 is accommodated in the accommodation cavity 262. The engagementportion 24 is configured to cause the guide portion 22 to be incommunication with the accommodation portion 26, to deliver an e-liquidin the liquid inlet hole 222 to the vaporization element 40.

The vaporization element 40 is configured to convert the delivered ane-liquid into vapor in a heating manner. The air outlet hole 224 is incommunication with the vaporization surface of the vaporization element40, the e-liquid is heated on the vaporization surface and vaporizedinto vapor, and the vapor is delivered through the airflow channel 30from the air outlet hole 224.

In this embodiment, referring to FIG. 2 and FIG. 3 , the upper cover 20is an integrally-formed component. Specifically, the liquid inlet hole222 and the air outlet hole 224 are separately provided on an endsurface of the upper cover 20 close to the liquid storage cavity 10,while the accommodation cavity 262 is formed on an end surface of theaccommodation portion 26 far away from the liquid storage cavity 10; andfinally, a through hole causing the liquid inlet hole 222 to be incommunication with the accommodation cavity 262 is provided on theengagement portion 24. Certainly, the guide portion 22, the engagementportion 24, and the accommodation portion 26 may alternatively bemachined on the upper cover 20 in other machining sequences or manners.This is not specifically limited herein.

By using a structure where the guide portion 22, the engagement portion24, and the accommodation portion 26 are integrally formed, the quantityof elements of the vaporization assembly 100 can be reduced, so that themounting is more convenient and faster and the related sealingperformance is better.

FIG. 4 is a schematic structural diagram of an embodiment of avaporization element of an electronic vaporization device according tothe present invention. The vaporization element 40 includes a poroussubstrate 42 and a heating layer. The heating layer includes aconductive layer 44 and a stabilizing layer 46. The porous substrate 42includes a vaporization surface 422, where the conductive layer 44 andthe stabilizing layer 46 are sequentially formed on the vaporizationsurface 422. An e-liquid in the liquid storage cavity 10 is delivered tothe porous substrate 42 through the upper cover 20 and is furtherdelivered onto the vaporization surface 422 by the porous substrate 42.Therefore, the e-liquid on the vaporization surface 422 may be heatedwhen the conductive layer 44 and/or the stabilizing layer 46 is poweredon to generate heat, thereby vaporizing the e-liquid into vapor.

The porous substrate 42 is made of a material of a porous structure, andto be specific, the material may be a porous ceramic, porous glass,porous plastic, a porous metal, and the like. The material of the poroussubstrate 42 is not specifically limited in this application. In aspecific embodiment, the porous substrate 42 may be made of a materialhaving relatively low temperature resistance, for example, the porousplastic. In another embodiment, the porous substrate 42 may be made of aconductive material having a conductive function, for example, theporous metal.

The porous ceramic has stable chemical properties, and does notchemically react with an e-liquid; the porous ceramic can withstand ahigh temperature and does not deform due to an excessively high heatingtemperature; the porous ceramic is an insulator, and is not electricallyconnected to the conductive layer 44 formed on the porous ceramic tocause a short circuit; and the porous ceramic is convenientlymanufactured and has low costs. Therefore, in this embodiment, theporous ceramic is selected to manufacture the porous substrate 42.

In an embodiment, a porosity of the porous ceramic may range from 30% to70%. The porosity refers to a ratio of a total volume of tiny pores in aporous medium to a total volume of the porous medium. The magnitude ofthe porosity may be adjusted according to ingredients of the e-liquid.For example, a relatively high porosity is selected when a viscosity ofthe e-liquid is relatively large, to ensure the e-liquid guide effect.

In another embodiment, the porosity of the porous ceramic may range from50% to 60%. The porosity of the porous ceramic is controlled to rangefrom 50% to 60%. According to an aspect, it can be ensured that theporous ceramic has higher e-liquid guide efficiency, and dry burningcaused by unsmooth e-liquid circulation is avoided, thereby improvingthe vaporization effect. According to another aspect, the case that thee-liquid is guided too fast by the porous ceramic, making it difficultto lock the e-liquid and causing a greatly increased probability ofe-liquid leakage can be avoided.

Further, in this embodiment, the conductive layer 44 and the stabilizinglayer 46 are both porous films. The conductive layer 44 may be arrangedon the vaporization surface 422 of the porous substrate 42 by using adirect-current sputtering deposition process or a magnetron sputteringdeposition process. The stabilizing layer 46 may be formed on one sideof the conductive layer 44 far away from the porous substrate 42 byusing the direct-current sputtering deposition process or the magnetronsputtering deposition process.

Further, in this application, the vaporization element further includesa first electrode 47 and a second electrode 48 located on thestabilizing layer 46 far away from the porous substrate 42 and coveringa part of the stabilizing layer 46.

In a specific implementation, a resistivity of the stabilizing layer 46is higher than a resistivity of the conductive layer 44, and oxidationresistance of the stabilizing layer is lower than oxidation resistanceof the conductive layer 44. Specifically, a material of the stabilizinglayer 46 is one or any combination of aluminum, zinc, tin, magnesium, ortitanium. A material of the conductive layer 44 is one or anycombination of titanium, zirconium, niobium, tantalum, or 316 stainlesssteel. Materials of the first electrode 47 and the second electrode 48are silver. Specifically, in an embodiment, the material of thestabilizing layer 46 is aluminum. The material of the conductive layer44 is a titanium-zirconium alloy.

Titanium and zirconium are characterized as follows:

(1) Titanium and zirconium are both metals having good biocompatibility,and especially, titanium is a biophile metal element having highersafety performance.

(2) Titanium and zirconium have larger resistivities among metalmaterials. In a normal temperature state, the alloy has a resistivitythree times an original resistivity after titanium is alloyed withzirconium according to a specific proportion, which is more suitable forbeing used as a heating film material.

(3) Titanium and zirconium have small thermal expansion coefficients,and the alloy has a smaller thermal expansion coefficient after titaniumis alloyed with zirconium, to better thermally match the porous ceramic.After titanium is alloyed with zirconium according to a specificproportion, the alloy has a lower melting point, and the film-formingproperty of magnetron sputtering coating is better.

(4) After coating of a metal, it can be seen by electron microscopeanalysis that microscopic particles of the metal are spherical, and theparticles are crowded together to form a microscopic morphology similarto cauliflower; while it can be seen by electron microscope analysisthat microscopic particles of a film formed by the titanium-zirconiumalloy are sheet-shaped, and some grain boundaries between particlesdisappear, to provide better continuity.

(5) Titanium and zirconium both have very good plasticity and elongationrates, and the titanium-zirconium alloy film has better resistance tothermal cycling and current impact.

(6) Titanium is usually used as a stress buffer layer of metals andceramics and an activation element of ceramic metallization, andtitanium reacts with a ceramic boundary to form a relatively strongchemical bond, which may improve the adhesion of the film.

Further, since the titanium-zirconium in a titanium-zirconium alloy filmhas poor stability in the air at high temperature, zirconium easilyabsorbs hydrogen gas, nitrogen gas, and oxygen gas, and the alloy hasbetter gas absorption performance after zirconium is alloyed withtitanium, the stabilizing layer 46 further needs to cover the conductivelayer 44 after the conductive layer 44 is manufactured, where thematerial of the stabilizing layer 46 is aluminum.

In an embodiment, after the stabilizing layer 46 (which is an aluminumlayer) is manufactured, the first electrode 47 and the second electrode48 are manufactured in a screen-printing manner, and thenlow-temperature sintering is performed on the first electrode 47 and thesecond electrode 48. The first electrode 47 and the second electrode 48cover a part of the stabilizing layer 46. When the first electrode 47and the second electrode 48 are formed in a low-temperature sinteringmanner, a relatively dense aluminum oxide layer is formed on a surfaceof the stabilizing layer 46, so that the conductive layer 44 can beisolated from air, thereby preventing a resistance value of theconductive layer 44 from being increased, to resolve the problem oftaste change and stability due to an increase in a resistance value ofthe heating layer. According to another aspect, when the first electrode47 and the second electrode 48 are manufactured in the low-temperaturesintering manner, as the first electrode 47 and the second electrode 48are sintered, the stabilizing layer 46 prevents a region of thestabilizing layer 46 covered by the first electrode 47 and the secondelectrode 48 from being oxidized, thereby avoiding the formation of acontact resistance.

Since a melting point of aluminum is 660° C. and a melting point ofaluminum oxide is 2054° C., the stabilizing layer 46 can maintain itsown stability and agglomeration is not prone to occur duringvaporization. Compared with the case that agglomeration is prone tooccur in a precious-metal passivation layer such as Au/Ag duringvaporization, causing failure of a heating body, selecting aluminum asthe material of the stabilizing layer 46 can resolve such problems.According to another aspect, aluminum oxide has same main ingredients asthe ceramic, has a low thermal expansion coefficient, and has smallerdeformation during current impact.

The stabilizing layer 46 is made of aluminum whose overall resistivityis larger than that of a precious metal. A resistivity of the preciousmetal ranges from 0.8 ohms to 1.2 ohms, and the resistivity of aluminumhas a minimum value of about 1 ohm through parameter adjustment andsubstantially ranges from 1.5 ohms to 3 ohms. In addition, resistivitiesof the conductive layer 44 and the stabilizing layer 46 are relativelyclose by using the foregoing process, which can prevent a current of oneof the layers from being excessively large. Theoretically, a thermalexpansion coefficient of the precious metal gold is 14.2, but a thermalexpansion coefficient of aluminum oxide formed after aluminum issintered is about half that of gold, that is, 7.1. Therefore, adeformation rate of the conductive layer is lower during inhaling, andthen the stability is improved.

In a specific embodiment, a thickness of the heating layer ranges from1.5 μm to 5 μm, where the heating layer includes the conductive layer 44and the stabilizing layer 46. Specifically, a thickness of theconductive layer 44 ranges from 2 μm to 3 μm, and a thickness of thestabilizing layer 46 ranges from 0.5 μm to 2 μm.

Based on the above, in the embodiments of the present invention, thematerial of the conductive layer 44 is set to one or any combination oftitanium, zirconium, niobium, tantalum, or 316 stainless steel, and thematerial of the stabilizing layer 46 is set to one or any combination ofaluminum, zinc, tin, magnesium, or titanium. In addition, the firstelectrode 47 and the second electrode 48 are manufactured in thelow-temperature sintering manner, to prolong the service life of theheating body, reduce the increase in the resistance value, and eliminatethe contact resistance.

FIG. 5 is a schematic flowchart of a first embodiment of a manufacturingmethod for a vaporization element of an electronic vaporization deviceaccording to the present invention. The manufacturing method includesthe following steps:

Step S51: Provide a porous substrate, where the porous substrateincludes a vaporization surface.

The porous substrate is made of a material of a porous structure, and tobe specific, the material may be a porous ceramic, porous glass, porousplastic, a porous metal, and the like. The material of the poroussubstrate is not specifically limited in this application. In a specificembodiment, the porous substrate may be made of a material havingrelatively low temperature resistance, for example, the porous plastic.In another embodiment, the porous substrate may be made of a conductivematerial having a conductive function, for example, the porous metal.The porous substrate includes the vaporization surface.

Step S52: Arrange a conductive layer on the vaporization surface of theporous substrate.

The conductive layer is formed on the vaporization surface of the poroussubstrate by using a magnetron sputtering deposition process or adirect-current sputtering deposition process. Specifically, a materialof the conductive layer is one or any combination of titanium,zirconium, niobium, tantalum, or 316 stainless steel. Using an examplein which the conductive layer is arranged by using the direct-currentsputtering deposition process, a specific process is as follows: Avacuum degree is kept in a range of 8×10⁻⁴ Pa to 2×10⁻³ Pa; a power iskept in a range of 1500 W to 2500 W, and a time is kept in a range of 70min to 110 min; and a pressure is kept in a range of 0.3 Pa to 0.8 Pa, atemperature is kept in a range of a room temperature to 300° C., and aparticle diameter is kept approximately in a range of 200 nm to 400 nm.

Step S53: Arrange a stabilizing layer on a surface of the conductivelayer far away from the porous substrate.

The stabilizing layer is arranged on the surface of the conductive layerfar away from the porous substrate by using the magnetron sputteringdeposition process or the direct-current sputtering deposition process.Specifically, a material of the stabilizing layer is one or anycombination of aluminum, zinc, tin, magnesium, or titanium. Using anexample in which the stabilizing layer is arranged by using thedirect-current sputtering deposition process, a specific process is asfollows: A time ranges from 40 min to 60 min, a power ranges from 500 Wto 1500 W, a pressure ranges from 1 Pa to 1.5 Pa, and a temperatureranges from a room temperature to 300° C. A particle diameter rangesapproximately from 100 nm to 200 nm.

In this embodiment, the conductive layer and the stabilizing layer aresequentially formed on the vaporization surface. An e-liquid in theliquid storage cavity is delivered to the porous substrate through theupper cover and is further delivered onto the vaporization surface bythe porous substrate. Therefore, the e-liquid on the vaporizationsurface may be heated when the conductive layer and/or the stabilizinglayer 46 is powered on to generate heat, thereby vaporizing the e-liquidinto vapor.

In an embodiment, a total thickness of the conductive layer and thestabilizing layer is 1.5 where a thickness of the conductive layerranges from 2 μm to 3 μm, and a thickness of the stabilizing layerranges from 0.5 μm to 2 μm.

In an embodiment, a resistivity of the stabilizing layer is higher thana resistivity of the conductive layer, and oxidation resistance of thestabilizing layer is lower than oxidation resistance of the conductivelayer. Specifically, the material of the stabilizing layer is aluminum,and the material of the conductive layer is a titanium-zirconium alloy.

In the present invention, the material of the conductive layer is set toone or any combination of titanium, zirconium, niobium, tantalum, or 316stainless steel, and the material of the stabilizing layer is set to oneor any combination of aluminum, zinc, tin, magnesium, or titanium.Therefore, the stabilizing layer can form a dense aluminum oxide layeron the conductive layer, and the conductive layer can be isolated fromair, thereby reducing the increase in the resistance value of theconductive layer, to resolve the problem of poor and unstable taste dueto the increase in the resistance value of the conductive layer.

FIG. 6 is a schematic flowchart of a second embodiment of amanufacturing method for a vaporization element of an electronicvaporization device according to the present invention. Step S61, stepS62, and step S63 are respectively the same as step S51, step S52, andstep S53 in the first embodiment shown in FIG. 5 . A difference lies inthat, this embodiment further includes step S64: Arrange a firstelectrode and a second electrode covering a part of the stabilizinglayer on one side of the stabilizing layer far away from the poroussubstrate in a screen-printing manner, and then perform low-temperaturesintering on the first electrode and the second electrode.

Specifically, materials of the first electrode and the second electrodeare silver. The first electrode and the second electrode covering a partof the stabilizing layer are arranged on one side of the stabilizinglayer far away from the porous substrate in the screen-printing manner.The first electrode and the second electrode cover a part of thestabilizing layer. Then low-temperature sintering is performed on thefirst electrode and the second electrode. During low-temperaturesintering, a relatively dense aluminum oxide layer is formed on asurface of the stabilizing layer, so that the conductive layer can beisolated from air, thereby preventing a resistance value of theconductive layer from being increased, to resolve the problem of tastechange and stability due to an increase in a resistance value of theheating layer. According to another aspect, when the first electrode andthe second electrode are manufactured in the low-temperature sinteringmanner, as the first electrode and the second electrode are sintered,the stabilizing layer prevents a region of the stabilizing layer coveredby the first electrode and the second electrode from being oxidized,thereby avoiding the formation of a contact resistance.

The foregoing descriptions are merely embodiments of the presentinvention, and the protection scope of the present invention is notlimited thereto. All equivalent structure or process changes madeaccording to the content of this specification and accompanying drawingsin the present invention or by directly or indirectly applying thepresent invention in other related technical fields shall fall withinthe protection scope of the present invention.

While the invention has been illustrated and described in detail in thedrawings and foregoing description, such illustration and descriptionare to be considered illustrative or exemplary and not restrictive. Itwill be understood that changes and modifications may be made by thoseof ordinary skill within the scope of the following claims. Inparticular, the present invention covers further embodiments with anycombination of features from different embodiments described above andbelow. Additionally, statements made herein characterizing the inventionrefer to an embodiment of the invention and not necessarily allembodiments.

The terms used in the claims should be construed to have the broadestreasonable interpretation consistent with the foregoing description. Forexample, the use of the article “a” or “the” in introducing an elementshould not be interpreted as being exclusive of a plurality of elements.Likewise, the recitation of “or” should be interpreted as beinginclusive, such that the recitation of “A or B” is not exclusive of “Aand B,” unless it is clear from the context or the foregoing descriptionthat only one of A and B is intended. Further, the recitation of “atleast one of A, B and C” should be interpreted as one or more of a groupof elements consisting of A, B and C, and should not be interpreted asrequiring at least one of each of the listed elements A, B and C,regardless of whether A, B and C are related as categories or otherwise.Moreover, the recitation of “A, B and/or C” or “at least one of A, B orC” should be interpreted as including any singular entity from thelisted elements, e.g., A, any subset from the listed elements, e.g., Aand B, or the entire list of elements A, B and C.

What is claimed is:
 1. A vaporization element of an electronicvaporization device, the vaporization element comprising: a poroussubstrate; and a heating layer, wherein the porous substrate comprises avaporization surface and the heating layer covers the vaporizationsurface, wherein the heating layer comprises a conductive layer and astabilizing layer, the conductive layer covers the vaporization surface,and the stabilizing layer covers a surface of the conductive layer farfrom the porous substrate, wherein a resistivity of the stabilizinglayer is higher than a resistivity of the conductive layer, and whereinan oxidation resistance of the stabilizing layer is lower than anoxidation resistance of the conductive layer.
 2. The vaporizationelement of claim 1, wherein a material of the stabilizing layercomprises at least one of aluminum, zinc, tin, magnesium, or titanium,and wherein a material of the conductive layer comprises at least one oftitanium, zirconium, niobium, tantalum, or 316 stainless steel.
 3. Thevaporization element of claim 2, wherein the material of the stabilizinglayer comprises aluminum, and wherein the material of the conductivelayer comprises a titanium-zirconium alloy.
 4. The vaporization elementof claim 1, wherein a thickness of the heating layer ranges from 1.5 μmto 5 μm, wherein a thickness of the stabilizing layer ranges from 0.5 μmto 2 μm, and wherein a thickness of the conductive layer ranges from 2μm to 3 μm.
 5. The vaporization element of claim 1, further comprising:a first electrode and a second electrode located on the stabilizinglayer far from the porous substrate and covering a part of thestabilizing layer.
 6. The vaporization element of claim 5, whereinmaterials of the first electrode and the second electrode comprisesilver.
 7. A vaporization assembly of an electronic vaporization device,the vaporization assembly comprising: a liquid storage cavity configuredto store an e-liquid; and the vaporization element of claim 1, whereinthe e-liquid in the liquid storage cavity is deliverable to thevaporization surface.
 8. An electronic vaporization device, comprising:a power supply assembly; and the vaporization assembly of claim 7,wherein the power supply assembly is electrically connected to thevaporization assembly to supply power to the vaporization element of thevaporization assembly.
 9. A manufacturing method for a vaporizationelement of an electronic vaporization device, the method comprising:providing a porous substrate, the porous substrate comprising avaporization surface; arranging a conductive layer on the vaporizationsurface of the porous substrate; and arranging a stabilizing layer on asurface of the conductive layer far from the porous substrate, wherein aresistivity of the stabilizing layer is higher than a resistivity of theconductive layer, and wherein an oxidation resistance of the stabilizinglayer is lower than an oxidation resistance of the conductive layer. 10.The manufacturing method of claim 9, wherein arranging the conductivelayer on the vaporization surface of the porous substrate comprisesarranging the conductive layer on the vaporization surface of the poroussubstrate using a direct-current sputtering deposition process or amagnetron sputtering deposition process, and/or wherein arranging thestabilizing layer on the surface of the conductive layer far from theporous substrate comprises forming the stabilizing layer on one side ofthe conductive layer far from the porous substrate using thedirect-current sputtering deposition process or the magnetron sputteringdeposition process.
 11. The manufacturing method of claim 9, furthercomprising: arranging a first electrode and a second electrode coveringa part of the stabilizing layer on one side of the stabilizing layer farfrom the porous substrate in a screen-printing manner; and performinglow-temperature sintering on the first electrode and the secondelectrode.
 12. The manufacturing method of claim 9, wherein a totalthickness of the stabilizing layer and the conductive layer ranges from1.5 μm to 5 μm, a thickness of the stabilizing layer ranges from 0.5 μmto 2 μm, and a thickness of the conductive layer ranges from 2 μm to 3μm, and/or wherein a material of the stabilizing layer comprisesaluminum, zinc, tin, magnesium, or titanium, and wherein a material ofthe conductive layer comprises titanium, zirconium, niobium, tantalum,or 316 stainless steel.
 13. The manufacturing method of claim 12,wherein the material of the stabilizing layer comprises aluminum, andwherein the material of the conductive layer comprises atitanium-zirconium alloy.